Clustering of gold atoms in ion-implanted silica after thermal annealing in different atmospheres
Abstract
The clustering process of gold atoms in ion-implanted silica, during annealing in different atmospheres, is experimentally investigated and phenomenologically described. With respect to inert (Ar) or reducing (H2-Ar) atmosphere, annealing in oxidizing (air) atmosphere is the most effective in promoting cluster formation above 700-800 °C due to a thermally activated correlated diffusion of gold atoms and excess oxygen molecules coming from the atmosphere.
- Publication:
-
Physical Review B
- Pub Date:
- February 2001
- DOI:
- 10.1103/PhysRevB.63.075409
- Bibcode:
- 2001PhRvB..63g5409M
- Keywords:
-
- 68.55.Ln;
- 61.46.+w;
- 66.30.-h;
- 85.40.Ry;
- Defects and impurities: doping implantation distribution concentration etc.;
- Diffusion in solids;
- Impurity doping diffusion and ion implantation technology