Nucleation and growth kinetics in semiconductor chemical vapor deposition
Abstract
We have studied the kinetics of nucleation and growth during Si/Si(100)-(2×1) homoepitaxy by ultrahigh vacuum chemical vapor deposition from SiH4, employing scanning tunneling microscopy and comparative rate equation simulations of the growth processes. Island formation in this highly complex system, in the presence of mobile hydrogen and other metastable SiHx species, is analyzed and compared to molecular-beam epitaxy growth and predictions from established rate equation theory. The deviations from classical theory can be understood by taking into account the kinetics of the SiH4 dissociation cascade that leads to epitaxial Si growth.
- Publication:
-
Physical Review B
- Pub Date:
- January 2001
- DOI:
- 10.1103/PhysRevB.63.041302
- Bibcode:
- 2001PhRvB..63d1302S
- Keywords:
-
- 68.35.Fx;
- 68.55.Jk;
- 82.65.+r;
- Diffusion;
- interface formation;
- Structure and morphology;
- thickness;
- crystalline orientation and texture;
- Surface and interface chemistry;
- heterogeneous catalysis at surfaces