MBE growth of mid-infrared antimonide LEDs with strained electron barriers
Abstract
InAs/InAs xSb 1- x single quantum well (SQW) p-i-n structures have been grown on p +-InAs(0 0 1) substrates by molecular-beam epitaxy. Significant improvements in SQW light emitting diode performance have been realized by the incorporation of strained electron barrier layers. Room temperature performance has increased by a factor of up to 7. Additional 4 K magneto-electro-luminescence measurements demonstrate the good materials quality.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- July 2001
- DOI:
- 10.1016/S0022-0248(01)00780-1
- Bibcode:
- 2001JCrGr.227..600L