Epitaxial alloy films of Zintl-phase Ca(Si 1- xGe x) 2
Abstract
Reactive deposition epitaxy growth of calciumgermanosilicides Ca(Si 1- xGe x) 2 with 0⩽ x⩽1 is described, starting from epitaxial Si 1- xGe x films on Si(1 1 1) as well as pure Si(1 1 1) and Ge(1 1 1) as substrate material. The Ge content x of the Ca(Si 1- xGe x) 2 films formed is identical to that of the original Si 1- xGe x films within experimental accuracy. Ca(Si 1- xGe x) 2 Zintl-phases show a trigonal rhombohedral crystal structure with a tr6 stacking sequence. While the c lattice constant is 30.6 Å independent of the Ge content, the a lattice constant increases linearly with x from a=3.855 Å for CaSi 2 to a=4.01 Å for CaGe 2. Ca(Si 1- xGe x) 2 is found to be unstable in ambient atmosphere and decomposes typically within some minutes.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- March 2001
- DOI:
- 10.1016/S0022-0248(01)00686-8
- Bibcode:
- 2001JCrGr.223..573V