Band parameters for III-V compound semiconductors and their alloys
Abstract
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- June 2001
- DOI:
- 10.1063/1.1368156
- Bibcode:
- 2001JAP....89.5815V
- Keywords:
-
- 71.20.Nr;
- 73.20.At;
- 01.30.Rr;
- 71.70.Ej;
- 71.70.Ch;
- 71.18.+y;
- 73.40.Kp;
- Semiconductor compounds;
- Surface states band structure electron density of states;
- Surveys and tutorial papers;
- resource letters;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Crystal and ligand fields;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions