Temperature Dependence of the Optical Band Edge of GeI_2
Abstract
Thin, hexagonal, single crystals of layer structured GeI2 up to 1.5 cm^2 were grown by vapor reaction. Powder x-ray diffraction and optical transmission of the air sensitive thin films and single crystals produce new data on lattice parameters. X-ray analysis yields a c-axis of 6.828 Åand an a-axis of 4.251 ÅThe optical data indicate that GeI2 has a direct energy gap of 2.49 eV at 300^oK with only slight exciton involvement. Measurements to 7^oK indicate a band edge temperature dependence of +0.4 meV/^oK.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2001
- Bibcode:
- 2001APS..MARX30001G