NMR in magnetic semiconductors (Ga,Mn)As.
Abstract
The novel magnetic semiconductor (Ga_1-xMn_x)As has recently been the focus of great experimental and theoretical interest because of the interplay between ferromagnetism and semiconductor properties. We report here results of our nuclear magnetic resonance (NMR) investigations on films of (Ga,Mn)As. Our sample, (Ga_.95Mn_.05)As, was prepared by molecular beam epitaxy (MBE) on GaAs substrate. SQUID measurements reveal clear ferromagnetic ordering with the onset at Tc = 60 K. We discuss implications of our measurements and methods to isolate the desired signal from the large background originating from the substrate.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2001
- Bibcode:
- 2001APS..MARQ31003G