Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots
Abstract
Transverse spin lifetimes of optically pumped carriers in InAs self-assembled quantum dots are obtained using the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect).footnote R. J. Epstein et al., submitted for publication. Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature (6 -100 K). The ground and first excited dot states are spectrally resolved indicating a reduced lifetime in the excited state. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to the InAs wetting layer, suggesting a dependence on the initial location of the spins. Supported by ARO, DARPA/ONR and NSF.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2001
- Bibcode:
- 2001APS..MARE25008E