Room-temperature Oxygen Dependent Properties of Ferroelectric Pb(Zr,Ti)O3 Thin-Films
Abstract
Polarization vs. applied field (P-E) hysteresis loops measurements on Pb(Zr,Ti)O3 (PZT) thin-films were performed using a controlled-atmosphere probe station. The films included both highly oriented (111)PbZr_0.55Ti_0.45O3 deposited on (111)Si/SiO_2/Ti/Pt substrates using pulsed laser deposition (PLD) and commercially-available rf-sputtered PZT thin-films obtained from Ramtron Corporation. Two different capacitor configurations were utilized, producing different results. These configurations included both planar capacitors, with either symmetric or asymmetric area electrodes, and sandwich capacitors with inherently asymmetric electrodes. Translation of ferroelectric hysteresis loops along the polarization axis were observed for capacitors with asymmetric area electrodes. These translations were found to be consistent with the development of a dc voltage that develops across the sample capacitor. The magnitude of this voltage was strongly dependent on the partial pressure of oxygen at room temperature. Translations were not observed, however, for the same films with symmetric area electrodes, suggesting a cancellation occurs in the planar capacitor configuration typically used in ferroelectric test measurements.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2001
- Bibcode:
- 2001APS..MAR.Y8004M