Geometrical Magnetothermopower in n-type InSb
Abstract
It is known[1] that in semiconductors in which the minority carriers have a higher mobility than the majority carriers, such as p-type InSb, the geometry of a semiconductor sample can be manipulated to create a very large change of the thermoelectric power in a magnetic field by freezing out the contribution of the minority carrier. This geometrical magnetothermopower opens a new route toward high-efficiency thermoelectric materials. In this talk, we extend this observation to n-type InSb, in which the majority carriers have the highest mobility. Experimental results for the magnetoresistance, magneto-thermopower and Peltier effect are given for a sample in a geometry approaching the Corbino geometry. The effects are modeled theoretically. We also examine the thermoelectric reciprocity relations for these macroscopic systems, the equivalent of the Onsager relations governing microscopic reciprocity. [1] J. P. Heremans, C. M. Thrush and D. T. Morelli, Proc. 19th Int. Conf. on Thermoelectricity, Cardiff, Wales, UK, Aug. 2000.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2001
- Bibcode:
- 2001APS..MAR.W9002H