Agglomeration of Cobalt Disilicide on Silicon
Abstract
CoSi2 layers, 30 nm thick, were prepared from Co films deposited on Si and reacted either at 650°C or 800°C . The morphological stability of these layers during annealing at 850°C or 1150°C was monitored by sheet resistance measurements. In agreement with models proposed by others, the layers with the smaller grains display better stability
- Publication:
-
Silicides: Fundamentals & Applications. Edited by MIGLIO L. Published by World Scientific Publishing Co. Pte. Ltd
- Pub Date:
- 2000
- DOI:
- 10.1142/9789812792136_0027
- Bibcode:
- 2000sfa..conf..359A