Epitaxial Growth of SiO2 on Mo(112)
Abstract
A new preparation is reported which, for the first time, results in a thin, crystalline SiO2 film on a Mo(112) single crystal. The procedure consists of repeated cycles of silicon deposition and subsequent oxidation, followed by a final annealing procedure. AES and XPS have been used to control film stoichiometry. LEED pictures of high contrast show a hexagonal, crystalline SiO2 overlayer with a commensurate relationship to the Mo(112) substrate. The wetting of the substrate by the film has been investigated by LEED, XPS and TDS, revealing that the film covers the substrate completely.
- Publication:
-
Surface Review and Letters
- Pub Date:
- 2000
- DOI:
- 10.1142/S0218625X00000038
- Bibcode:
- 2000SRL.....7....7S