Si ion implantation of SrTiO 3passivated YBa 2Cu 3O 6+ x films for multilayer processing of electronic circuits
Abstract
Si ion implantation was used to inhibit superconductivity in YBa 2Cu 3O 6+ x thin films passivated with SrTiO 3 (YBCO/STO) as a first lithography step in the fabrication of multilayer integrated circuits. Doses in the range of 1×10 15/cm 2-1×10 16/cm 2 were found to be optimal for both effective inhibition of YBCO/STO films and enabling growth of an additional superconducting YBCO layer. In comparison to bi-layer YBCO/STO films, STO-only control films were shown to be less susceptible to implant damage, which allowed higher quality growth of a second YBCO film. Besides vacancy and interstitial creation, two additional types of implant damage mechanisms associated with the crystal chemistry of YBCO were identified - recrystallization and in-plane ferroelastic strain - both of which impeded the growth of additional good-quality YBCO films. These two damage mechanisms were not observed in implanted STO-only films.
- Publication:
-
Physica C Superconductivity
- Pub Date:
- September 2000
- DOI:
- 10.1016/S0921-4534(00)00096-4
- Bibcode:
- 2000PhyC..338..269L