Pressure-induced distortion of the β-Sn phase in silicon: Effects of nonhydrostaticity
Abstract
Studies of phase transitions under pressure usually assume perfect hydrostatic conditions but it is far from being true in practice. Theoretical calculations based on a tight-binding model prove that nonhydrostatic conditions can significantly reduce the Si II to Si XI transition pressure. This distortion induced by nonhydrostaticity was already observed in high-pressure experiments (in the case of GaSb and InSb), and so this work is the theoretical confirmation of the possibility of such a phenomenon.
- Publication:
-
Physical Review B
- Pub Date:
- September 2000
- DOI:
- 10.1103/PhysRevB.62.7110
- Bibcode:
- 2000PhRvB..62.7110L
- Keywords:
-
- 61.50.Ks;
- 62.50.+p;
- 64.60.-i;
- 64.70.Kb;
- Crystallographic aspects of phase transformations;
- pressure effects;
- High-pressure and shock wave effects in solids and liquids;
- General studies of phase transitions;
- Solid-solid transitions