MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (1 1 1)A GaAs substrates
Abstract
In this paper we present the achievement of high-quality strained InGaAs/GaAs piezoelectric quantum wells embedded in a P-I-N structure which was grown on a (1 1 1)A GaAs substrate at a single temperature by atmospheric pressure metalorganic vapor-phase epitaxy. The growth conditions and the structural and optical properties of a 10-period multi-quantum well structure with an In content of 13% in the wells are presented. High-resolution X-ray diffractometry studies show good crystalline and interfacial quality, as well as good repeatability of the quantum well parameters. A photoluminescence full-width at half-maximum value of 11 meV at 12 K was determined for the principal quantum well interband transition. A monolayer analysis of the principal optical transition, which includes the piezoelectric field, indicates a well width fluctuation of less than ±1 monolayer over the 10 quantum well periods.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- December 2000
- DOI:
- 10.1016/S0022-0248(00)00763-6
- Bibcode:
- 2000JCrGr.221..525K