Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
Abstract
The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1 V). This paper presents DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology. It analyses their electrical behavior under total dose irradiation.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- June 2000
- DOI:
- 10.1109/23.856488
- Bibcode:
- 2000ITNS...47..613F