1/<B>f</B> Noises of Homopolar and Heteropolar Semiconductors
Abstract
The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron-optical phonon interactions. The analytical expressions of the spectral density and Hooge's αH parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.
- Publication:
-
International Journal of Modern Physics B
- Pub Date:
- 2000
- DOI:
- 10.1142/S0217979200000637
- Bibcode:
- 2000IJMPB..14..751G