GaN/W/W-oxide metal base transistor with very large current gain and power gain
Abstract
We demonstrate a GaN/W/W-oxide metal base transistor (MBT) whose collector is formed by oxidizing the intrinsic W base. The thickness of the nonoxidized intrinsic base of the fabricated collector-up MBT on a sapphire substrate was estimated to be 2-3 nm. Although the MBT showed large leakage, subtraction of the leakage from collector current revealed that the transistor had a very large small-signal direct current (dc) current gain of 87 dB and a dc power gain of 50 dB. This indicates that the GaN-based MBT is a possible candidate for microwave and millimeterwave amplifiers as well as for high-speed integrated circuits used in optical fiber communication system.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2000
- DOI:
- 10.1063/1.127108
- Bibcode:
- 2000ApPhL..77..753M
- Keywords:
-
- 85.30.Pq;
- 84.40.-x;
- 85.30.De;
- Bipolar transistors;
- Radiowave and microwave technology;
- Semiconductor-device characterization design and modeling