Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs(001)
Abstract
Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Å epitaxial Gd2O3 film grown on GaAs(001). The Gd-O bond length is determined to be 2.390±0.013 Å, which corresponds to a +0.063±0.013 Å increase or a +2.7%±0.6% bond-length strain relative to the bond length in a bulk Gd2O3 powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd2O3 with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2000
- DOI:
- 10.1063/1.126397
- Bibcode:
- 2000ApPhL..76.2526N
- Keywords:
-
- 68.60.Bs;
- 61.10.Ht;
- 78.70.Dm;
- 68.55.Jk;
- Mechanical and acoustical properties;
- X-ray absorption spectroscopy: EXAFS NEXAFS XANES etc.;
- X-ray absorption spectra;
- Structure and morphology;
- thickness;
- crystalline orientation and texture