Hot Electrons in Strongly Localized Systems with a Large Localization Length
Abstract
We have studied the non-ohmic effects in the conductivity of a two-dimensional Si δ -doped GaAs structure which undergoes the crossover from weak to strong localization with decreasing electron concentration. The mechanism of non-linearity, the hot-electron effects, remains the same on both sides of the crossover. This indicates, in particular, that the electron-phonon interaction in systems with a large localization length is not affected by electron localization. When the electrons are removed from equilibrium with phonons, the hopping conductivity depends only on the electron temperature. This observation suggests that the hopping transport in systems with a large localization length is assisted by electron-electron interactions.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2000
- Bibcode:
- 2000APS..MARZ18002G