Charged Magneto-Exciton Transitions in GaAs Single Heterojunctions

Positively and negatively charged excitons from a p- and n-doped GaAs/AlGaAs single heterojunctions (SHJ) have been investigated in the presence of magnetic field to 60T. For an n-doped SHJ, the negatively charged exciton transitions show large intensity oscillations near the ν=1/3 and ν=1/5 Landau filling state. For a p-doped SHJ, the binding energy of the positively charged exciton shows √B dependency. This binding energy behavior reflects the strong Coulomb interactions within the excitonic complexes.