Resistive Detection of Single Electron Motion and Spin Resonance

For any of the quantum computing proposals involving spin states in solids, the spin orientations of individual qubit has to be measured at the end of the operations. In the design of the spin-resonance-transistors, a conventional field-effect-transistor (FET) channel is used to accomplish this seemingly almost impossible task. Toward this end, we have performed a sequence of exploratory experiments in Si and GaAs based FET devices. Current noise spectrum in a short channel Si FET, known as the random telegraph signal, is measured for different temperatures and gate voltages. Using a GaAs/AlGaAs heterostructure, we have detected electron spin resonance of a spin-split Landau level by a transport measurement in microwave fields. The extension of our results to the actual implementation of the spin-resonance-transistors will be discussed.