Laser Initiated Chemical Deposition of Both Ferromagnetic and Antiferromagnetic Chromium Oxide
Abstract
The ferromagnetic chromium oxide CrO2 has been predicted to be half-metallic. This makes it as an attactive material for tunnel junction. The antiferromagnetic chromium oxide Cr_2O3 is suitable for tunnel junction barrier both below and above the Neel temperature. We have used both the laser initiated chemical vapor deposition and laser induced deposition from solution to grow the films of chromium oxide. For the solution based deposition procedure, we were able to obtain both thin films as well as dots(about 220nm and 300nm diameter) with a very little distribution in sizes. This indicates that under some conditions, the solution based deposition is uniform and the deposition of dots depends on surface nucleation sites. Vapor deposition is based on the photolysis of Cr(CO)6 in oxgen environment. This latter deposition process results in two phase Cr_2O3 and CrO2 thin films that depend on the differentO2 partial pressure. Both the techniques and the magnetic properties of these chromium oxide thin films will be presented.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2000
- Bibcode:
- 2000APS..MARR24003C