Nanofabrication using a chloromethyl-calixarene negative resist in electron beam lithography
Abstract
For nanometer-scale fabrication, p-methylacetoxy-calix[6]arene (MC[6]AOAc), which is one of calixarene derivatives, has been utilized and has provided an ultra-high resolution of 10-nm. However, in spite of its high resolution, MC[6]AOAc has a disadvantage in its sensitivity. In this contribution, we have investigated a chloromethylated calixarene, that is, p-chloromethyl-methoxy-calix[n]arene (CMC[n]AOMe) (n=5,6,7). The CMC[n]AOMe resist has a high-resolution of 12nm and a high sensitivity of 0.8mC/cm under an electron-beam irradiation. We succeeded in fabricating 7-nm-width Si line with good uniformity for entire 10-μm length by using a halide plasma etching and the CMC[n]AOMe resist as an etching mask.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2000
- Bibcode:
- 2000APS..MARM28013S