Quantization of Silicon Schottky Barrier MOSFETs
Abstract
Silicon Schottky Barrier MOSFETs have been proposed as an alternative to ultra-scaled conventional MOSFETs. We have recently demonstrated that these transistors can exhibit on/off ratios of 10^5 at room temperature and are thus a viable candidate for device applications. In this work, the low temperature (<10 K) properties are investigated. Quantization due to spatial confinement from the source/drain is observed in the large width devices (width > 2.5 μ m). The subband structure of devices with channel lengths ranging from 2 μ m to 0.05 μ m will be discussed.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2000
- Bibcode:
- 2000APS..MARB28013C