Aluminum-free active-area laser bars at 790- to 830-nm wavelengths

We present results on Al-free active area (AAA) cw and qcw laser bars for wavelengths of 790 - 830 nm. The wafers are grown by Solid Source MBE. The device structure consists of a single tensile strained Al-free quantum well (QW) surrounded by Al-free waveguide layers and InAlGaP claddings. Additional tensile strain in QW allows continued high performance characteristics while moving from 830 nm towards the shorter wavelengths. Tensile strain in QW provides strongly TM polarized lasing action. Laser bars were mounted on passively cooled heatsinks p-side down. Typical maximum wall plug efficiencies of our cw (30% fill factor, 19 emitters of 150 micron aperture, 1 mm long cavity) and qcw (90% fill-factor, 60 emitters of 150 micron aperture, 0.6 mm long cavity) laser bars are 50 - 60%. Latest performance and reliability results are presented.