Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at Zero Magnetic Field
Abstract
A metal-insulator transition in two-dimensional electron gases at B = 0 is found in Ga[Al]As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e2 and critical carrier densities of 1.2×1011 cm-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
- Publication:
-
Physical Review Letters
- Pub Date:
- February 1999
- DOI:
- 10.1103/PhysRevLett.82.996
- arXiv:
- arXiv:cond-mat/9808276
- Bibcode:
- 1999PhRvL..82..996R
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 3 figures, 21 references