Raman spectroscopy on the β-C3N4 structure formed by low-energy nitrogen ion implantation into a diamond surface

Raman spectroscopy was employed to study the structure of the carbon nitride formed by low-energy nitrogen ion implantation into a diamond film. A series of narrow Raman peaks were observed in the range of 150-1500 cm^-1. These peaks match well with the calculated Raman frequencies of β-C₃N₄, revealing the formation of the β-C₃N₄ phase. No Raman peaks were detected in this region when a graphite substrate was implanted under the same conditions, suggesting that the sp³-bonded carbon favors the formation of the sp³-bonded β-C₃N₄.