Metal-insulator transition in a disordered two-dimensional electron gas including temperature effects
Abstract
We calculate self-consistently, the mutual dependence of electron correlations and electron-defect scattering for a two-dimensional electron gas at finite temperature. We employ a Singwi, Tosi, Land, and Sjölander approach to calculate the electron correlations, while the electron scattering rate off Coulombic impurities and surface roughness is calculated using self-consistent current-relaxation theory. The methods are combined and self-consistently solved. We discuss a metal-insulator transition for a range of disorder levels and electron densities. Our results are in good agreement with recent experimental observations.
- Publication:
-
Physical Review B
- Pub Date:
- March 1999
- DOI:
- 10.1103/PhysRevB.59.7255
- arXiv:
- arXiv:cond-mat/9810357
- Bibcode:
- 1999PhRvB..59.7255T
- Keywords:
-
- 73.20.Dx;
- 71.30.+h;
- 71.55.-i;
- Metal-insulator transitions and other electronic transitions;
- Impurity and defect levels;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Disordered Systems and Neural Networks;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, RevTeX + epsf, 5 figures