Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells
Abstract
- Publication:
-
Physica Status Solidi B Basic Research
- Pub Date:
- November 1999
- DOI:
- 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4
- Bibcode:
- 1999PSSBR.216..269K