Preparation and properties of thick not intentionally doped GaInP(As)//GaAs layers
Abstract
We report on liquid-phase epitaxial growth of thick layers of GaInP(As), lattice matched to GaAs. Layers with thicknesses up to 10 μm were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a significant decrease in the residual impurity level when erbium is added to the melt. Fundamental electrical and optical properties of the layers were investigated.
- Publication:
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Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- September 1999
- DOI:
- Bibcode:
- 1999NIMPA.434..164N