Study of charge transport in non-irradiated and irradiated silicon detectors
Abstract
The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p +-n-n + diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse response induced by α and β particles in non-irradiated and irradiated silicon detectors. The detectors have been irradiated either with ≈1 MeV neutrons up to a fluence of 11.2×10 13 n/cm 2 or with 24 GeV/ c protons up to a fluence of 10.6×10 13 p/cm 2. After n to p-type inversion, a small junction on the p + side of the detector is introduced to fit the experimental data and therefore to account for the evolution of the electrical characteristics of the detectors with fluence.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- April 1999
- DOI:
- 10.1016/S0168-9002(98)01478-8
- Bibcode:
- 1999NIMPA.426...99L