Photoluminescence from GaAs nanocrystals by selective excitation
Abstract
We have studied photoluminescence (PL) properties of GaAs nanocrystals in SiO 2 matrices by means of resonant excitation spectroscopy. Phonon-assisted PL is clearly observed in direct-gap semiconductor GaAs nanocrystals. The exciton–phonon coupling is enhanced due to quantum confinement in small dimensions. The temperature and excitation-energy dependence of resonantly excited PL spectra show that there are two different origins of visible luminescence. The origin of phonon-assisted luminescence in GaAs nanocrystals will be discussed.
- Publication:
-
Journal of Luminescence
- Pub Date:
- January 1999
- DOI:
- 10.1016/S0022-2313(99)00115-5
- Bibcode:
- 1999JLum...83..301K
- Keywords:
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- GaAs nanocrystals;
- Photoluminescence;
- Quantum dots