Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors
Abstract
PtSi source/drain p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated at sub-40 nm channel lengths with 19 Å gate oxide. These devices employ gate-induced field emission through the PtSi ∼0.2 eV hole barrier to achieve current drives of ∼350 μA/μm at 1.2 V supply. Delay times estimated by the CV/I metric extend scaling trends of conventional p-MOSFETs to ∼2 ps. Thermal emission limits on/off current ratios to ∼20-50 in undoped devices at 300 K, while ratios of ∼107 are measured at 77 K. Off-state leakage can be reduced by implanting a thin layer of fully depleted donors beneath the active region to augment the Schottky barrier height or by use of ultrathin silicon-on-insulator substrates.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 1999
- DOI:
- 10.1063/1.123477
- Bibcode:
- 1999ApPhL..74.1174W
- Keywords:
-
- 85.30.Tv;
- 85.40.Ls;
- 85.40.Ux;
- Field effect devices;
- Metallization contacts interconnects;
- device isolation