Corona Discharge Source for the Growth of III-V Nitrides
Abstract
The III-V nitrides AlN, GaN and InN are subject to intense studies due to their wide bandgap properties. Although devices such as blue light emitting diodes (LED) have been fabricated, optimization of fabrication techniques is still a primary goal. For example, metastable N2* in the A3S+u state has been proposed as the ideal nitrogen precursor, but viable sources do not exist. We have developed a low cost supersonic free-jet corona discharge source that can produce a high intensity beam of nitrogen in this state. The plasma source and the ensuing beam were characterized by optical emission spectroscopy and potential appearance spectroscopy. Films of AlN and GaN were grown on 6H-SiC(0001) and characterized by Rutherford backscattering, scanning electron microscopy, electron channeling pattern and atomic force microcopy. Our results indicate a high incorporation efficiency approaching 100% that is independent of temperature in the range from 600^oC to 900^oC. Direct molecular chemisorption seems to be the underlying growth mechanism making the source ideal for low-temperature grown films.
- Publication:
-
APS Four Corners Section Meeting Abstracts
- Pub Date:
- October 1999
- Bibcode:
- 1999APS..4CF..EB11J