High-temperature conductance of the single-electron transistor
Abstract
The linear conductance of the single-electron transistor is determined in the high-temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and are found to explain recent experimental data.
- Publication:
-
Physical Review B
- Pub Date:
- October 1998
- DOI:
- 10.1103/PhysRevB.58.R10155
- arXiv:
- arXiv:cond-mat/9806117
- Bibcode:
- 1998PhRvB..5810155G
- Keywords:
-
- 73.23.Hk;
- 73.40.Gk;
- 73.40.Rw;
- Coulomb blockade;
- single-electron tunneling;
- Tunneling;
- Metal-insulator-metal structures;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 2 figures