Determination of deep levels' parameters in epi-GaAs by a transient acoustoelectric technique
Abstract
A new acoustoelectric method is developed in order to study solid state layered structures. The method is based on the transient transverse acoustoelectric voltage (TAV) measurements. The decay of the TAV signal is read when a surface acoustic wave (SAW) producing the signal is switched off. The shape of the transient voltage and its spectral dependence on the wavelength of a light irradiation are studied. A theoretical model is presented to explain the transient TAV data. The results demonstrate that the transient acoustoelectric technique is an effective means of characterizing trapping centres in the bulk and at surfaces or interfaces of epitaxial semiconductor structures.
- Publication:
-
Journal of Physics D Applied Physics
- Pub Date:
- September 1998
- DOI:
- 10.1088/0022-3727/31/18/018
- Bibcode:
- 1998JPhD...31.2319O