Simulations of the Response of Molecules and Materials to Fast, Intense Laser Pulses.
Abstract
We have performed simulations of the coupled response of electrons and ions to ultrashort, ultra-intense laser pulses, using both the tight-binding and first-principles formulations of <A HREF=http://physics.tamu.edu/ allen/dynamics.html>electron-ion dynamics</A>. For the H_2^+ molecule, the following phenomena have been observed: one-photon and multiphoton dissociation, bond softening, ion-population trapping, electron-population trapping, sudden electronic transitions (associated with n-photon dressed states), Rabi flopping, and harmonic generation. For GaAs and Si, a nonthermal transition to lattice destabilization is observed, in agreement with the experimental findings of Mazur, Callan, and coworkers, and those of other groups. We have performed a first-principles simulation for Si (in the local-density approximation), with similar results. Simulations for fullerenes will be reported in a separate talk. Finally, we have developed a formalism for treating the nonlinear response of GaAs and Si. [These problems were respectively addressed by Khosravi, Graves, Gao, Torralva, and Dumitrica.] Future prospects for applying and improving this technique will be discussed.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 1998
- Bibcode:
- 1998APS..MAR.W1802A