Correlations Between Morphology and Transport Properties of Ag Overlayers on Si(111)
Abstract
The morphological evolution and transport properties of ultrathin Ag films on Si(111) are investigated by scanning tunneling microscopy (STM) and resistivity measurements as functions of deposition temperature, annealing temperature, and Ag coverage. Both the morphology and the resistivity are found to be distinctly different for films grown at room temperature (RT) vs films obtained by low-temperature (150 K) deposition followed by RT annealing. In particular, the final resistivity of the film after annealing at RT depends on the initially deposited Ag amount: for low coverages (<<4ML) it is higher while for high coverages (>4ML) it is lower than that of the film at the deposition temperature T=150 K. STM images of the morphology support the strong correlation between the film structure and transport. These results will be discussed in terms of a recent growth model.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1998
- Bibcode:
- 1998APS..MAR.K2204G