Femtosecond Studies of Carrier Dynamics in GaN
Abstract
Ultrafast carrier dynamics were measured in GaN by femtosecond two-color pump-probe technique with 150fs resolution. Undoped wurtzite GaN sample studied in this work was grown by moecular beam epitaxy on a (0001)-oriented sapphire substrate. Third harmonic wave from Ti:sapphire Regen was employed as pump and second harmonic as probe. Transient transmission measurement shows the electron-phonon scattering and longitutal optical phonons relaxation. A simply two temperature model is used to explain the results.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1998
- Bibcode:
- 1998APS..MAR.A1803Z