Optical Band Edge of Layer Structured Germanium (II) Di-iodide
Abstract
Thin hexagonal crystals of layer structured Germanium II di-iodide up to 1.5 cm^2 in area were grown by vapor reaction followed by vapor transport. Thin films of this water sensitive crystal were prepared in an evaporator located in a neutral atmosphere glove box. New optical absorption data from both thin films and single crystals indicate that Germanium (II) di-iodide has a direct optical band gap at 2.3 eV. The similarities between germanium II di-iodide and lead (II) diiodide indicate that Germanium (II) di-iodide is a good candidate for intercalation.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1998
- Bibcode:
- 1998APS..MAR.A1501M