Plasma Parameter Control of the Spatially Afterglow Plasma for the Gr owth of 3C-SiC Epitaxial Films by Triode Plasma CVD
Abstract
To grow epitaxial SiC films at low temperature, plasma parameters in the afterglow plasma region of hydrogen gas were extensively controlled using rf triode plasma CVD. Under negative grid biases, the discharge region was effectively confined between cathode and grid. The average sheath potential of anode surface drastically decreased from 60V at positive grid bias of 50V to about 1V at negative grid bias of -50V. The electron temperature in the afterglow plasma region also decreased to less than 1eV. The reduction of the rf plasma potential fluctuation was also investigated by the addition of bypass condensers between grid and grounded chamber. The amplitude of the potential fluctuation in afterglow plasma region decreased from several tens volts to less than 2V at grid bias of -100V with the bypass condenser. At the same time, the electron temperature decreased to less than 0.2eV. Using dimethylsilane diluted with hydrogen as the source gas, 3C-SiC films were epitaxially grown on hydrogen terminated Si substrates placed on the anode at 1000^oC under the above plasma conditions.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 1998
- Bibcode:
- 1998APS..GECEMP407H