Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide

It is shown that the temperatures of post-implantation annealing of radiation defects in silicon carbide may be reduced by pulsed photon treatment. With a correct choice of spectral composition and radiation energy, pulsed photon treatment is effective for annealing radiation defects through the selective absorption of photons at the corresponding levels. It is suggested that the annealing mechanism is ionizational (annealing under these experimental conditions cannot be explained by a thermal mechanism alone).