Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates Andreev, A. N. ; Smirnova, N. Yu. ; Tregubova, A. S. ; Shcheglov, M. P. ; Chelnokov, V. E. Abstract Publication: Semiconductors Pub Date: March 1997 DOI: 10.1134/1.1187112 Bibcode: 1997Semic..31..232A