Hole and electron doping in ultrathin films with the infinite layer structure by electric field effect
Abstract
We measured the charging effect in cuprates with the infinite layer structure by using FET-like junctions. It has been found that Sr deficient SrCuO 2-δ (SCO) exhibits a positive sign in the resistance ( R) vs. gate-voltage ( Vg) characteristics, revealing p-type conduction in the material. On the other hand, we observe a negative sign in R vs. Vg characteristics for negative and small positive Vg, but a reversal for large positive Vg which is an open question. The former suggests to be a n-type conductor for Gd substituted Sr 0.9Gd 0.1CuO 2-δ (SGCO). We analyzed the gate-voltage dependence of the resistance as an effect of the change of the areal carrier density by applied electric field.
- Publication:
-
Physica C Superconductivity
- Pub Date:
- February 1997
- DOI:
- 10.1016/S0921-4534(97)00018-X
- Bibcode:
- 1997PhyC..276..127K