First Experimental Proof of Excitons and Landau States in In0.53Ga0.47As/InP Quantum Wells at Room Temperature
Abstract
We have studied the magneto-optical Kerr ellipticity of the electron-heavy hole states of two lattice-matched In0.53Ga0.47As/InP multi-quantum-wells (MQW) with different barrier widths at room temperature. The energy shifts of the excitonic ground state in low and high magnetic fields allow us to estimate the dimensionality of the electronic system. A comparison of the calculated and the experimentally determined binding energy shows that for a MQW with thin barriers coupling between adjacent quantum wells must be taken into account. The decrease of the binding energy due to the coupling is demonstrated by a stronger diamagnetic shift and a transition from the excitonic shift to a Landau-like behaviour at higher magnetic fields. From the higher excited states, which exhibit no excitonic behaviour, we evaluate the energy dependence of the reduced effective mass up to 200 meV above the bandgap of In0.53Ga0.47As.
- Publication:
-
Physica Status Solidi Applied Research
- Pub Date:
- November 1997
- DOI:
- 10.1002/1521-396X(199711)164:1<183::AID-PSSA183>3.0.CO;2-T
- Bibcode:
- 1997PSSAR.164..183J