Recent applications of nuclear microprobe techniques to microelectronics
Abstract
Applications of nuclear microprobe techniques to microelectronics, in particular, two- or three-dimensional analysis of integrated circuit structures using micro RBS (Rutherford Backscattering) and IBIC (Ion Beam Induced Current) measurements are discussed. SEU (Single Event Upset) mapping and IBIC measurements in SRAMs (Static Random Access Memories) and DRAMs (Dynamic Random Access Memories) are reviewed together with charge carrier collection simulation and transient IBIC measurements. Importance of applications of microprobes to new microelectronic structures such as SOI (Silicon-on-Insulator) devices for future hand-held information systems are also discussed. Possible applications of SEU measurement as alternative experimental procedures to cosmic ray neutron strikes are discribed.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- July 1997
- DOI:
- 10.1016/S0168-583X(97)00187-0
- Bibcode:
- 1997NIMPB.130..466T