Crystallinity improvement of epitaxial CeO 2 films by high-energy ion irradiation
Abstract
The high-energy ion assisted crystallinity improvement of epitaxially grown CeO 2 (110) films on Si(100) is investigated using the irradiation of B, C, O, and Si ions with a dose of 1 × 10 15 ions/cm 2 and an energy ranging from 1 to 4 MeV. The crystallinity improvement, which is evaluated by Rutherford backscattering with channeling, is correlated to the ratio of the electronic deposition energy ( De) to the nuclear deposition energy ( Dn). The crystalline quality is improved with inceasing {De}/{Dn} above 200. The net crystallinity improvement is determined by the dominance between the defect annihilation driven by the inelastic collisions with electrons and the damage production by nuclear collisions. For {De}/{Dn} < 200 , the damage production exceeds the defect annihilation. In the extreme case of 4 MeV Si ion irradiation with {De}/{Dn} = 171 , the energy dependence of the ratio of aligned to random yield reveals the defect type change in the irradiated films.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- May 1997
- DOI:
- 10.1016/S0168-583X(96)01114-7
- Bibcode:
- 1997NIMPB.127..166S