In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions

Irradiation in a direction parallel to the surface of Si, Highly Oriented Pyrolithic Graphite (HOPG) and mica (MI) samples is applied for in-depth characterization of the damage distribution produced by 209 MeV Kr ions. In Si four distinct damage zones are delineated. The features giving the dominant contribution to the roughness value are identified. Comparison of spreading resistance measurements on the original surface and on a surface revealed by grinding away 5 μm from the sample surface permitted the identification of regions where the proximity of the surface plays a major role. For HOPG and MI, doses below 10 ¹² cm ^-2 should be used to avoid cleavage, since this leads to mechanical instability.