Rapid thermal annealing of arsenic implanted Si 1- xGe x epilayers

Rapid thermal annealing of arsenic implanted Si _{1- x}Ge _x was studied by secondary ion-mass spectroscopy (SIMS) and spreading resistance probe (SRP) over a wide range of Ge fractions (0-43%). Redistribution of the implanted arsenic was followed as a function of Ge content and annealing temperature. Arsenic concentration profiles from SIMS indicated that the behavior of implanted arsenic in Si _{1- x}Ge _x after RTA was different from that in Si, and the Si _{1- x}Ge _x samples exhibited box-shaped, concentration-dependent diffusion profiles with increasing Ge content. The maximum concentrations of electrically active arsenic in Si _{1- x}Ge _x was found to decrease with increasing Ge content. Experimental results showed that the arsenic diffusion is enhanced with increasing temperature for certain Ge content and strongly dependent on Ge content, and the higher Ge content, the faster As diffusion.